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Figure 3: Die stress simulation result between MR and LAB.
die and bump during the chip joining process, which takes a little
over a second to complete. During the process, the temperature
reaches around 230ºC. However, the time it takes to complete
the solder joining process is exceptionally short (a fraction of a
second). As a result, the coefficient of thermal expansion (CTE) • 3D Logic /
mismatch between the die and the substrate is not substantial. Memory and Flip-Chip
Substrate laminate material has a viscoelastic nature, whereas – Wafer Bumping (Bump Fusion) Flux
solder itself is a viscoplastic material that is sensitive to time and – Flip-Chip Flux
temperature. Both of these kinds of materials don’t get enough • Lidded MEMS
exposure time at high temperature to deform inelastically. A study – Dispensable Fine-Pitch
was conducted to capture the chip joining temperature and time Solder Paste
as shown in Figure 4. In the chart, the solid black line represents
an already joined chip, and the yellow line is for an unjoined chip. Wafer-Level Package
From the chart it is clear that formation of the solder joint takes Ultra-Small Passive
place at 230ºC at a time of about 0.3s.
System-in-Package • Ball Grid Array •
– Wafer Level Ball-Attach Flux – Ball-Attach Flux
– Ultrafine-Pitch Solder Paste
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one-stop solution
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Figure 4: LAB chip attach profile using an IR laser.
In this study, time is measured before and after solder joint
solidification. Figure 5 shows that at 0.25s, the bump was not yet
joined, whereas at 0.3s, solidification was completed. Chip-package
interaction (CPI) performance is much better in LAB than with Check out our wide portfolio of soldering materials for
MR for the same reason as above. A numerical calculation has been Heterogeneous Integration & Assembly:
conducted to predict and compare bump displacement after the chip www.indium.com/CSR/HI
attach process between the MR and LAB processes. In this analysis,
a small flip-chip package with a 12X12mm body size, a 5X5mm askus@indium.com
die size, and a 4L embedded trace coreless substrate was used as a
TV. A volume average technique is used to calculate the CTE of the
substrate stack up.
In the MR process, the entire package (die, substrate, etc.) was
subjected to a temperature of 220ºC during the chip attach process,
whereas for the LAB process, the substrate was held to a temperature
of 145ºC. In our numerical analysis, 220ºC and 145ºC are considered
stress-free conditions for MR and LAB, respectively. Calculation
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