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is not p ossible i n homoge ne ou s captures the pitch at which the dies are are typically this size). As the die size
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monolithic chips, no matter how big. connected to the substrate. The right-hand goes below 1mm , the yield approaches
Furthermore, it is possible to scale side is bound by the ball grid array (BGA) 100% in mature technologies (in fact, at
these systems to wafer scale allowing pitches on today’s PCBs (~100s of μm) and these dimensions, we can blind-build these
us to pack high-compute power in very the left-hand side represents the contacted dies and expect them to work) and so the
small form factors. We would not be gate pitch at which transistors on the chip optimal die size is expected to be between
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able to do this were it not for the fine may be connected (~10s of nm). The y-axis 1 and 100mm . If dies go below 1mm , two
bump and trace pitch and the close die depends on what is being plotted. effects begin to dominate: die handling
placement. The fine-pitch capability Let’s consider the die size shown in becomes difficult (both for assembly and
combined with the ability to place brown. Large dies yield poorly, and as we test), and kerf loss becomes appreciable.
dies in close proximity, allows these decrease the die size, the yield increases; but Another consideration is IP reuse.
heterogeneous systems to behave as if below about 100mm , the yield increases— Generally speaking, small dies have less
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they were monolithic. This last point though slowly (this is why memory dies content and are less likely to be specialized.
is crucial and differentiates today’s
heterogeneous systems from those of
yore. One thing we must mention is
that dielets, today, are assembled on
a substrate by mechanical placement
and this is a limitation on overlay
tolerance (currently ~+/-1μm), but
we expect both steady improvement
in placement accuracy and perhaps
true lithographically-defined ways of
connecting the dies.
The newfound capability described
above changes the way in which we can
build system on chip (SoC) structures.
Today’s SoCs are typically synthesized
with soft intellectual property (IP)
d e sig n blo c k s u si n g h ig h -le vel
synthesis tools. Over 80% of these IP
blocks have been instantiated on some
other SoC or on test sites. However,
every time we tape out a new SoC, we
re-synthesize these very IP blocks in
new configurations, reduce them to
schematics, and finally, lay them out
physically and re-harden them. This
is a time-consuming and expensive
task and contributes enormously to the
so-called non-recurring engineering
(NRE) of building a new chip. Bigger
chips take longer and cost more and
limit the number of players who can
play this game. In 2016, I published
a paper [1] where I suggested that we
could pre-build a bunch of commonly
used dielets and stock them, so that
we could build a complex SoC by
assembling these prefabricated dies
usi ng these advanced packagi ng
constructs. This vision is slowly, but
surely, taking root.
Heterogeneous integration Figure 5: Various aspects of the Silicon Interconnect Fabric and SuperCHIPS platform. a) A chip micrograph
Based on the above sections, let’s explore showing the SuperCHIPS macros that drive fine-pitch connections between adjacent dies; b) A 4-deep row of
this heterogeneous integration space. The pillars at 10μm pitch yields an effective “bump” pitch of 2.5μm. c) The I/O drivers are small and must be contained
goal is to determine the optimal dielet size at the 10μm pitch, and consist of a cascaded set of inverters with the capability of both synchronous and
and vertical interconnect pitch as shown in asynchronous modes. d) The silicon interconnect fabric (Si IF) is a full-thickness silicon wafer with inorganic build-
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Figure 4. Let’s start with the x-axis, which up layers similar to the backend wiring of a 90nm CMOS technology structure. e) An assembly of four 1mm UDSP
functional dielets on the Si IF at 9.8μm “bump” pitch, sub-2μm trace pitch, and about 30-50μm inter-die spacing.
24 Chip Scale Review March • April • 2023 [ChipScaleReview.com]
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