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Figure 7: MLE’s unique clustered exposure configuration
enables exposure heads to be easily added to adjust for
different throughput needs and substrate sizes.
according to user needs by adding UV exposure
heads as shown in Figure 7 for reasons such
as: 1) facilitating rapid transition from R&D
to HVM mode; 2) throughput optimization; or
3) adaptation to different substrate sizes and
materials. It is also ideal for processing a range
of substrates from small silicon or compound
semiconductor wafers up to panel sizes.
Summary
MLE provides a new approach for
patterning through smart and agile digital
processing while delivering maskless
scalability in throughput and format with a
consumables-free infrastructure. It achieves
the same patterning performance regardless
of photoresist thanks to a flexible, reliable
and scalable high-power UV laser source
combination featuring multiple wavelength
options. The platform allows for patterning
of a wide variety of materials such as silicon, RoHS
mold, glass, polymers and laminates, using P
the same optics. The wafer chuck and
autofocus system compensate for substrate
bow and warp, which is especially important
for applications like FOWLP. The design
flexibility that the technology brings to the
current conservative environment opens up
room for new innovations, helps to shorten
development cycles, and at the same time
bridges the gap between R&D and HVM.
Biographies
Bozena Matuskova is Business Development Manager at EV Group, St. Florian am Inn, Austria. She holds
a Master of Engineering degree in Microelectronics from the Slovak U. of Technology and has 8+ years of
professional experience in engineering, business development and technical product marketing activities, in
both the semiconductor and automation engineering industries. Email B.Matuskova@evgroup.com
Thomas Uhrmann is Business Development Director at EV Group, St. Florian am Inn, Austria. He holds
an Engineering degree in Mechatronics from the U. of Applied Sciences in Regensburg, and a PhD in
Semiconductor Physics from Vienna U. of Technology.
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