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bonding, which involves selecting   The so-called self-assembly technology   a r c h i t e c t u r e s ,”  2 019 I E E E
        high-topography tested chips (>2µm)   relies upon the engineering of the surface   69TH Elec. Comp. and Tech.
        and transferring them to direct bonding   tension between two areas to be bonded   Conf. (ECTC), pp.:  569-578
        that tolerates a maximum topography   and the use of an intermediate liquid in   (DOI: 10.1109/ECTC.2019.00092).
        of 10nm [7]. This was made possible   order to rearrange the physical orientation   5.  P. Vivet, et al., “A 220GOPS 96-
        thanks to researchers’ deep expertise   (in the three dimensions x, y, z) between   core  processor  with  6  chiplets
        in planarization.                  them. Figure 6 describes the concept in   3D-stacked on an active interposer
                                           the case of two chips to be assembled.  offering 0.6ns/mm latency, 3TBit/s/
                                                                                      2
        Intel Components Research/CEA-       This technology could offer an        mm  inter-chiplet interconnects and
        Leti collaboration                 alternative to mechanical alignment     156mW/mm2@82% peak-efficiency
          The semiconductor industry widely   between the two areas, which could   DC-DC converters,” 2020 IEEE
        recognizes 3D integration technology   be decisive in reaching high bonding   Inter. Solid-State Circuits Conf.
        and heterogeneous architecture as a   throughput and ultimate accuracy as pick-  (ISSCC), pp.: 46+ (DOI: 10.1109/
        solution for advancing chip design.   and-place bonders still have challenges to   ISSCC19947.2020.9062927).
        Intel and CEA-Leti share the vision that   leverage throughput, alignment accuracy,   6.  A. Jouve, et al., “Die-to-wafer direct
        advanced 3D integration and packaging   and ultra-small dies bonding.      hybrid bonding demonstration
        tech nolog ies w ill st reng t hen I T                                     with high alignment accuracy and
        solutions, especially in the area of HPC.   Summary                        electrical yields,” 2019 International
        They signed an R&D agreement in 2016   The collaboration between CEA-      3D Systems Integration Conference
        on several strategic research programs,   Leti and Intel on silicon interconnect   (3DIC), Sendai, Japan, October
        including the Internet of Things (IoT),   technologies between chiplet and active   8-10, 2019. Pages 1-7 (DOI: 10.1109/
        high-speed wireless communication,   interposer and, more specifically, on   3DIC48104.2019.9058905).
        security technologies, and 3D displays   self-assembly, aims to overcome many   7.  E. Bourjot, et al., “Known good dies
        [8]. They extended this collaboration   of the challenges involving material,   (KGD) strategies compatible with
        in 2020, where Intel’s Components   processes and integration, and equipment.   direct hybrid bonding,” 2020 IEEE
        Research organization and CEA-Leti are   Never theless, the early proof-of-  International Workshop on Testing
        working together on 3D heterogeneous   concept released by CEA-Leti is very   Three-Dimensional, Chiplet-Based,
        technologies for HPC.              encouraging. With Intel’s support and   and Stacked ICs 3D&Chiplet Test,
          T h e  c ol l a b o r a t io n w i l l  a l l ow   the expected collaboration with different   session 2.
        both organizations to continue to   players in the supply chain, particularly   8.  https://www.leti-cea.com/cea-
        investigate future opportunities for the   equipment suppliers, this technology   tech/leti/english/Pages/What’s-
        heterogeneous  integration roadmap   may be a must-have technology for low-  On/News/The-CEA-announces-
        thanks to a combined broad base of   cost, high-performance heterogeneous   expanded-collaboration-with-Intel-
        3D technologies involving both chip   integration in the future.           to-advance-cutting-edge-research-
        packaging and interconnectivity. The                                       and-innovation-in-key-digital-
        work should ultimately pay off in   References                             areas.aspx
        solutions that offer flexibility in building   1.  https://ieeexplore.ieee.org/stamp/  9.  A. Jouve, et al., “Self-assembly
        large, high-performance, power-efficient   stamp.jsp?arnumber=7545486      process for 3D die-to-wafer using
        systems out of smaller functions.     2.  ht t ps://newsroom.i ntel.com /  direct bonding: a step forward
                                                news/new-intel-architectures-      toward process automation,“ 2019
        Self-assembly technologies: the         technologies-target-expanded-      IEEE 69TH ECTC, pp.: 225-234
        new deal                                market-opportunities/#gs.rp34uv    (DOI: 10.1109/ECTC.2019.00041).
          CEA-Leti published an approach at   3.  https://newsroom.intel.com/news/
        IEEE ECTC 2019 [9] that combines        intel-unveils-new-tools-advanced-
        advantages of die-to-wafer hybrid       chip-packaging-toolbox/#gs.qov5x0
        bonding and high throughput in the    4.  P.  Coud r ai n,  et  al.,  “Act ive
        pursuit of anticipating coming challenges.   interposer technology for chiplet-
                                                b a s e d  a d v a n c e d  3D s y s t e m


                       Biographies
                         Séverine Chéramy is Director of the Institute of Technological Research (ITR) 3D program and is also responsible
                       for 3DIC integration strategy and business development at CEA-Leti, Grenoble, France. She joined CEA-Leti in 2008
                       as 3D Project Leader, and was promoted in 2012 to 3D Integration Laboratory Manager. She holds an Engineering
                       Degree in Materials Science. Email Vincent Barral, Business Development Manager at vincent.barral@cea.fr

                         Johanna M. Swan is an Intel Fellow and the Director of Package Research and Systems Solutions in Components
                       Research within Technology Development at Intel Corporation, Chandler, Arizona, USA. She leads an
          interdisciplinary team of researchers charged with developing novel technologies and package architectures to enable continued
          semiconductor scaling such as the recent Omni-Directional Interconnect for 3D IC interconnects. Email johanna.m.swan@intel.com


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