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Embedded die (ED) technology is still in   Within the telecom and infrastructure end   there is a severe lack of supply on the market.
        its early years in terms of adoption. Players   market, SiP offers the significant packaging   Therefore, the main drivers are cost reduction
        like ACCESS Semiconductor and Schweizer   size reduction, ease of heterogeneous chip   and closing the supply-demand gap.
        are investing huge amounts in new plants   integration, and power reduction needed to   Heterogeneous SiP packaging is a
        in China. ED SiP is expected to grow at a   drive high-speed signals. 2.5D SiP is usually   natural outgrowth of hybrid and multi-
        34% CAGR, from US$55 million in 2019, to   based on a silicon interposer using fine-pitch   chip packaging technologies that have been
        US$315 million in 2025, with automotive,   BEOL wiring and 3D TSV to enable high-  developed to enable 5G telecommunication
        telecom and infrastructure, and mobile   density interconnection between multiple   and HPCs, data servers, and graphics.
        accounting for 96% of revenue.     devices. These are high-end SiPs and the   The internal speed in existing 2.5D Si
          Within the mobile and consumer end   technology is well established. However,   interposers and 3D TSV solutions is already
        market, a new generation of wireless   these technologies are still very expensive and   high, so performance is not the key driver
        connectivity systems is needed for the 5G
        roll-out: a disruptive technology boasting
        SiP adoption in connectivity, RF, and
        sensors. With higher performance demands
        comes challenging electrical, thermal,
        and mechanical requirements for longer
        operational battery life. Performance and
        miniaturization are, therefore, key drivers
        for SiP (Figure 4).
          RF and mmWave connectivity are
        crucial to a faster communication rate
        in this data-driven era. However, there
        are new packaging design and technical
        requirements needed to fully exploit the
        potential of mmWave communication,
        including specific integrated circuit
        (IC) design, multi-band switching, and
        interference management — especially
        antenna packaging and optimization. The
        current mainstream technique that involves
        integrating these dies into a smaller form
        factor is SiP.
          Antenna-in-package (AiP) is a new trend
        in IC packaging that is driving SiP because
        it allows integration of all the complex RF
        components, together with the baseband
        circuitry, into a completely self-contained
        module. This greatly facilitates the work of
        the system integrator because there is no
        longer a need to design complex RF circuits
        at the application printed circuit board (PCB)
        level. Also, the overall size of the complete
        application is reduced.
          Fur ther more, to power 5G, the
        a p pl ic a t io n w i l l p r o b a bly n e e d
        more battery space, so any possible
        miniaturization is critical. As such, SiP
        is an attractive solution. For the package
        substrate in 5G applications, electrical
        performance is advancing. Suppliers of
        core and build-up materials are now the
        key enablers. For 5G to work, connectivity
        communication speed requires stringent
        electrical  performance.  With  these
        new developments in SiP design,
        manufacturers are required to minimize
        signal loss and impedance loss through
        a low dielectric material and smoother
        interconnection trace.


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