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512A). For testing digital devices with a and precise control of the effects of
short distance between the pads, vertical process variations. To cross-check the
probes and wiring probes offer better manufacturing process goodness and
performance because they can work with validate the reliability of the verification
pitches of a few tens of micrometers. pattern tests, top-bottom capacitive and
resistive tests should be performed on
Testing multi-layer stacked wafers every chip, in addition to the kelvin tests
As we have seen, vertical integration performed on the verification patterns.
is very effective as a way to reduce the To keep under control every phase of the
chip form factor while increasing the process, this same test sequence should
device functionality Looking closer, we be repeated as every layer of the structure
observe that multi-layer silicon wafer is added.
layouts often include verification patterns The prober architecture based on
in addition to the device dies. These multiple mobile probe cards can be used
patterns are meant to simplify the volume to satisfy the test requirements noted
production test of the devices because above, during both the characterization
the quality of the wafer can be validated phase and the volume manufacturing
through a kelvin test performed on the phase. The same prober can mount—
Figure 4: Instead of moving the wafer under verification patterns, with no need to on the different axes—probe cards for
a probe card that is docked to the tester, the contact every single die individually. contacting the verification patterns
architecture of the TH2000 prober includes eight However, the manufacturing process of and probe cards for contacting the
independent robotic axes, each one moving a small these products often need to be refined single pads of individual dies. Without
probe card over the wafer surfaces.
through a long characterization to changing the machine setup, the prober
performance, thereby minimizing the ensure that the process itself does not can then be used for the production test
signal path length that ensures signal introduce high rates of product failures. on the verification patterns, keeping the
integrity and measurement reliability. During the process characterization, it possibility to perform additional tests on
The top-bottom continuity test, as is important to perform additional tests specific individual pads as needed.
an example, consists in measuring the on every die in order to have a complete
continuity between the two sides of every
pad, and can be performed with resistance
values ranging from micro-ohms to giga-
ohms, and capacitance values ranging
from pico-farads to milli-farads.
The extreme accuracy in resistance
test, combined with the possibility
to contact a pad from both sides
simultaneously, makes it possible to
perform a “virtual KGD test” on power
devices that executes at the wafer level
some challenging measurement, such as
the dynamic RDSon. This is possible as
the architecture of our prober eliminates
the influence of traditional prober chuck
resistance, thereby making the current Figure 5: Simultaneous probing on both sides of the wafer.
path length equivalent for every die,
which is contacted by a couple of probes
(one on top, one on bottom) as shown in
Figure 6.
Probe card technologies for
different applications
The probe cards can be based on different
technologies (cantilever, spring probes,
MEMS probes, wiring probes), and can
be designed according to the die density,
shape and map. The different probe card
technologies address different applications.
Cantilever probes represent the best option
for testing discretes, diodes, and transistors
that require high current (often exceeding Figure 6: Probing on both sides of the wafer permits extremely accurate resistance measurements because
the signal path length is the same for all the dies (there is no influence because of the chuck resistance).
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