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last process also makes it much easier to
attach passive devices of varying sizes. We
have a standing solution called CLIP (Chip
®
Last Integration Package).
For heterogeneous integration, the chip-
last approach is an ideal platform whereby
many different chips and passives can
be easily integrated in a common RDL
substrate, and is one in which the fine-
line RDL allows them to be put in close
proximity. It is also a good alternative to the
2.5D IC, which requires a very expensive
Si interposer with TSV. For example, for
Figure 6: Chip-first face-up fan-out process flow. GPU and high-bandwidth memory (HBM)
integration, the fine-line RDL allows high-
Chip shift and alignment. The lack last, and chip middle. And there are many density interconnection between the chips
of precision during pick and place can derivatives based on these different types. and can achieve decent performance at a
cause some challenges for the subsequent Chip first. Most of the fan-out packaging much lowered cost. The chip-last process,
lithography and alignment steps. The we see today uses the chip-first architecture. however, is a more complex process,
situation can be further worsened by Chip first represents the lowest cost solution therefore it has a higher cost than the chip-
thermally-induced chip shifting, whereby in fan-out technology, where the chips are first approach. The application of chip
the chip shifts away from its original bonded bonded to the carrier, either facing up or last, as a result, mostly targets high-end
position prior to patterning. There are several down, prior to the RDL formation. Chip-first markets that emphasize performance, such
solutions to address this issue; for example, face-down uses the least number of process as high-end processors, ASICs, and field-
one can select an adhesive to prevent the steps, whereas chip-first face-up will require programmable gate arrays (FPGAs) for
shifting, but such adhesives may be hard to an additional post-mold grinding step to networking, artificial intelligence (AI), and
remove afterwards. Another method would reveal the embedded chips. Generally, the HPC to replace 2.5D ICs.
be optimizing the process conditions and chip-first face-down approach is used for Chip middle. The need for double-sided
opting for better material selection to prevent smaller chips with RDL L/S ≥10/10µm, RDL fan-out solutions gave birth to the chip-
the coefficient of thermal expansion (CTE) whereas chip-first face-up approaches are middle process, where the chip is embedded
mismatch issue. used for larger chips. However, it does have and sandwiched by top and bottom RDL
Some of the more indirect approaches limitation in I/O density, chip size, and RDL layers. The method of connecting the top and
include chip placement with offsets, and L/S, and concerns in misalignment caused bottom RDLs varies, such as using a tall Cu
real-time adaptive mask alignment of the by the aforementioned chip shifting issue. pillar and via frames [4].
lithography tool. The former uses simulation Applications like accelerated processing The chip-middle process allows
to predict the potential shifting vector and unit (APU), central processing unit (CPU), heterogeneous integration in the vertical
feeds back the value to the pick and place GPU, baseband processor, application axis, where the chips can be embedded with
specific integrated circuit (ASIC), power passives or other chips bonded to the topside
management IC (PMIC), radio frequency RDL. One of the most notable applications
(RF), and analog, are ideal for the chip- would be the APU for the mobile market,
first structure. It also has the largest share for which we offer the PiFO (Pillars in Fan
®
in the fan-out market because of the Out), where the tall Cu pillar can provide
early development and matured process a much better electrical performance and
yield. PTI has two available technologies reliability over the solder-based through-
®
to address this market: CHIEFS (Chip mold via (TMV).
Integration Embedded Fan out Solution) and Chip-embedded FO. A natural extension
2
®
BF O (Bump Free Fan Out). The former of chip-last and chip-middle technologies
technology is a chip first face up with Cu would be chip-embedded fan-out. A silicon
post on chip, and the latter is chip first face chip embedded between the top and bottom
down without chip bumping. RDLs can serve as a localized high-density
Chip last. As the name suggests, the chip- interconnect for the chips it connects on
Figure 7: Physical warpage suppression methods. last approach is to build the RDL before top. This provides even better electrical
embedding the chips—therefore the chips performance than the chip-last solution,
machine. The latter approach simply enables must have bumping. The RDLs can be tested and does not require the expensive large Si
alignment to the local fiducials of the die for before chip bonding, eliminating the loss of interposer. The embedded chips can be much
adaptive patterning. known good die (KGD). Additionally, the smaller than the interposer and be placed
metallic bonding between the chip and RDL only where they are needed. The tall Cu
Applications and architectures also prevents the dreaded chip shifting issue. pillars can also serve as a power conduit for
Based on the type of architectures, FOPLP Building the RDL on the flat carrier also the top chips—this is a significant advantage
can be categorized into four major types: allows finer RDL L/S and higher I/O density over the TSVs in the Si interposer, where the
chip-first face-up, chip-first face-down, chip as low as the sub-micron ranges. The chip-
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