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on an incremental time-based cycle. Two   cavity made to precisely locate the metal   from the pre-bake temperature to the
        or three (optional) selectable gas inputs are   ceramic package (see Figure 3). The   final programmed reflow temperature,
        available. Process parameters are controlled   graphite insert was fabricated to fit inside   which can typically be from 10 to 50
        from software programs running on a   the package and provide precise location   degrees above the solder alloy melting
        Windows-based PC with custom software   of the preform and the GaN die.   point. It should be noted that there is
        and off-the-shelf hardware.          To ensure good contact between the   a temperature difference between the
          The process section of the Model   GaN die and the package, a free-floating   programmed reflow temperature and
        5100 Large Format soldering furnace   weight was used to assure good thermal   the actual temperature that the device
        is housed in a custom-built aluminum   connection between the die, preform,   package and preform achieve. The
        chamber. A “target” plate, typically   and the package. The GaN device may   control thermocouple, which drives the
        made of graphite, is heated from below   be fabricated with or without air bridges.   heater controller, is connected to the
        and at the perimeter with radiant flux   These air bridges cannot tolerate any   graphite target plate and is not in direct
        emitted directly from graphite heating   contact or any force that could collapse or   contact with the device package (refer
        elements. The main heating element is   damage them. To protect the top surface   to the bottom portion of Figure 3). The
        machined from a single sheet of graphite,   of the GaN die, a graphite bezel is placed   preform will reach a temperature well
        minimizing unheated areas, resulting in   over the die. The bezel is designed such   below the programmed temperature
        a uniform flux field. Secondary graphite   that its standoffs are contacting the die   value. This difference of the temperature
        heaters, located along each edge of the   in safe zones. Therefore, the weight is   is dependent upon the thermal mass of
        target plate, improve overall temperature   pressing on the bezel and the bezel is   the graphite tooling and associated free-
        uniformity by compensating for edge and   pressing on the die.        floating weights.
        sidewall heat losses.                                                   The reflow section described above
          Temperature control is accomplished   Profile                       is very critical, not only to achieve a
        with stand-alone soft-wired controllers   The profile was developed as shown   sufficiently high temperature to melt/
        that receive digital set points from the   in Figure 4. The profile started with   reflow the preform of AuSn, but the
        furnace control system. The temperature   a combination of nitrogen purges and   temperature ramp-up is done in a
        controllers operate a closed loop, directly   low vacuum level at room temperature.   partial vacuum (Torr range) to assist
        regulating the output of a three-phase   Those steps were followed with the   in thermal conductivity. Low-pressure
        SSR power module for the main heater
        and a single-phase module for the edge
        heaters. With a type K thermocouple
        used for feedback, both systems achieve
        an overall temperature regulation and
        repeatability of ±1°C.

        Test samples
          Ten devices were provided by the
        end-user for assembly, where a GaN
        die needed to be soldered into a AuNi-
        plated metal ceramic package, with AuSi
        preform (refer to Figure 3). Custom
        graphite tooling was fabricated for this
        evaluation. The graphite boat had a











                                           Figure 4: AuSn die attach temperature - pressure profile.
                                           pre-bake, where the temperature is   nitrogen gas is introduced to provide
                                           ramped to 240°C and is kept steady   better heat  transfer from  the target
                                           for 5-10 m i n to remove moist u re   plate, through the tooling fixture to the
                                           and surface  gas  molecules from  the   components. Refer to Figure 5 for a
                                           components to be soldered.         thermal conductivity chart.
                                             The next portion of the temperature   Once the preform has reached the full
                                           profile consists of the solder reflow   liquid state during the heating portion
        Figure 3: The GaN die, soldered to a AuNi metal   section.  This  includes  the  ramp  up   of the reflow, high-pressure (30-50psig)
        ceramic package with AuSn solder alloy.

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