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Figure 11: Similarity between the structure of CoWoS -L and FO-EB-T and US patent 11,410,933 [17,19].
can be seen that they are very similar, embedded in the cavity of a build- very similar to the structure of US
except TSVs are not used in the Si bridge up packaging substrate, such as the patent 11,410,933 proposed in [22],
of the patent. EMIB by Intel. except TSVs are not in the patent.
4. The TSV-interposer is replaced
Summary by a Si- b r id ge (w it h R DL s) Reference
S o m e i m p o r t a n t r e s u l t s a n d that is connecting the chiplets 1. J. H. Lau, Semiconductor Advanced
recommendations are summarized with microbumps such as those Packaging, Springer, 2021.
as follows: developed by IBM, AMD, and 2. J. H. Lau, “Recent advances and
Apple. There is no cavity on the trends in advanced packaging,”
1. At pre se nt , 2.5D a nd 3D IC build-up package substrate. IEEE Trans. on CPMT, Vol. 12, No.
integrations with TSV-interposers 5. The microbumps discussed in item 2, Feb. 2022, pp. 228-252.
are the key advanced semiconductor #4 can be eliminated by using Cu- 3. J. H. Lau, Chiplet Design and
packaging technologies for HPC, Cu bump-less hybrid bonding as H e t e r o g e n e o u s I n t e g ra t i o n
IoTs, autonomous vehicles, big data proposed in [21]. Packaging, Springer, 2023.
and instant data applications driven 6. The TSV-interposer is replaced by 4. J. H. Lau, “Recent advances and
by AI and 5G/6G. at least a Si-bridge (with RDLs and trends in multiple system and
2. The manufacturing yield loss of the with or without TSVs) embedded heterogeneous integration with TSV-
ever-increasing size of the TSV- in EMC with fan-out RDLs such interposers,” IEEE Trans. on CPMT,
interposer is so high that the cost as those developed by TSMC Vol. 13, No. 1, Jan. 2023, pp. 1-25.
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becomes unbearable. (CoWoS -L) and SPIL (FO-EB-T).
3. The TSV-interposer is replaced 7. T h e s t r u c t u r e o f T SMC’s Contact author for complete listing
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by the Si-bridge (with RDLs) CoWoS -L and SPIL’s FO-EB-T is
Biography
John H. Lau is a senior special project assistant at Unimicron Technology Corporation, Taoyuan City,
Taiwan (ROC). He has more than 40 years of R&D and manufacturing experience in semiconductor packaging,
528 peer-reviewed papers, 50 issued and pending US patents, and 23 textbooks. He is an ASME Fellow,
IEEE Fellow, and IMAPS Fellow. He earned a PhD degree from the U. of Illinois at Urbana-Champaign.
Email John_Lau@unimicron.com
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