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is used, a standard solder termination
can be used. In addition, integrated or
created passive components can also
be beneficial. Both 2D and 3D spiral
inductors, and even new inductor
passives are being developed – within
the RDL layers – to further improve
the performance allowing them to be
integrated and further miniaturized (see
Figure 11).
2.5D/3D
The 2.5D platform with a silicon
i nt e r p ose r evolve d a s a n at u r a l
progression from MCM on organic
substrate because of readily available
sub-micron L/S. A 2.5D platform
Table 1: RF front-end module adoption rate. SOURCE: TSR, Feb. 2022 enables a greater than 1X reticle size
die, and multi-layer sub-micron L/S for
high interconnect density at low latency.
The coefficient of thermal expansion
(CTE) match between the active die
and interposer also helps alleviate chip-
package interactions that induce failure
modes in flip-chip packages. Figure
12 shows the 2.5D package in high-
volume production at ASE; an ASIC
and four HBMs are integrated on a
silicon interposer using micro-bumps.
The interposer is then assembled on a
70X70mm organic substrate.
Re c e nt a dva nc e s a nd ongoi ng
developments i n hybr id bondi ng
(c ombi ne d me t a l a nd d iele c t r ic
bond) provide another step function
Figure 9: 2021 teardown analysis – USI UWB. SOURCE: TechSearch International
improvement in interconnect density
(Figure 13). Hybrid bonding is the
ideal candidate to achieve 10μm and
sub-micron scale for connectivity as
compared to 100µm pitch in advanced
f lip-chip technology. Both die-to-
wafer (D2W) and D2D hybrid solutions
address reticle size limitations for
manufacturing large dies. The reduction
in pitch provides flexibility in SoC
portioning. Furthermore, reduction of
Figure 10: A chip-last double-sided FOSiP. interconnection lengths from mm length
Figure 11: a) (left} Embedded passives in the RDL layers; and b) (middle) discrete and c) (right) created 2D and 3D.
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18 Chip Scale Review July • August • 2022 [ChipScaleReview.com]