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the optical IOs in the interposer where   References                       CA, 2018, pp. 70-78, doi: 10.1109/
        EPB≤1.2pJ/bit can be achieved with    14. T. Hisada, Y. Yamada, “Effect of   ECTC.2018.00019.
            -12
        a 10  BER while supporting a data rate   thermal properties of interposer   16. S. Y. Hou,  et  al.,  “Wafer-level
        of 896Gb/s/lane over distances of 5cm or   material on thermal performance   integration of an advanced logic-
        more. Another option is the use of optical   of 2.5 D package,” Inter. Conf.   memor y system th rough the
                                                                                                              ®
        fibers providing direct connectivity between   on Electronics Packaging (ICEP),   s e c ond -ge ne r at ion C oWoS
        interposers. The network integrated circuit   IEEE, 2014.                  technology,” IEEE Trans. on
        (NIC) and photonic  integrated circuit   15. T. Braun et al., “Panel-level   Electron Devices, 64.10 (2017):
        (PIC) dies shown in Figure 2d (in part   packaging - a view along the process   4071-4077.
        1), therefore, represent essential dies that   chain,” IEEE 68th Elec. Comp. and   17.  C-C. Lee, CP. Hung, C. Cheung, P-F.
        need to be integrated in the interposer for   Tech. Conf. (ECTC), San Diego,   Yang, C-L. Kao, D-L. Chen, et al.,
        serialization/deserialization of data and
        transmission. Optical coupling efficiency,
        waveguide loss and fiber alignment
        continue to be major challenges for
        achieving integrated photonic solutions.

        Summary
          For 3D stacking, power delivery and
        thermal management continue to be
        major problems. Emerging nonvolatile
        memory (NVM) devices such as resistive
        random access memory (ReRAM) and
        ferroelectric field-effect transistor (FeFET)
        integrated into 3D processing-in-memory
        (PIM) architectures suffer from stochastic
        variations in device properties and are very
        sensitive to temperature. As an example,
        the inference accuracy of ReRAM can
        be retained over long periods only if the
        junction temperature can be maintained
        below 85°C. Thermal management of
        NVM devices integrated into 3D stacks,
        therefore, represents a major challenge
        without which  PIM-  or HMC-based
        architectures may not be viable. Embedded
        fluidic channels in the stack for cooling
        these devices are therefore critical, which
        is an ongoing research area in academia.
          To summarize, a combination of 2D
        packaging and 3D stacking are required
        for supporting current and emerging AI
        applications. With Moore’s Law slowing
        down, advanced packaging is the path
        forward for continuing it at least for the next
        decade. The capability of interposers has
        advanced significantly in the last few years
        and this trend needs to continue. Advanced
        interposers of tomorrow will need to
        support digital, RF and optical functionality
        combined with high energy efficiency, low
        latency, and high bandwidth density—three
        metrics that will drive the next-generation
        of packaging technologies. Though HBM
        has become prevalent, 3D stacking of logic
        and memory continue to pose problems
        because of thermal management, and unless
        embedded cooling methods are developed
        inside the 3D stack, they will continue to
        pose problems.


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