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®
Figure 13: Average number of cycles to failure for sintered SiC-MOSFETs and DTS tested with power cycling (t on /t off = 1s/2s). The results at T j,max = 165°C are
from [8]. The pictures show the fracture surface on the DTS® backside or the die frontside after failure at 200°C.
meet the severe requirements for
SiC-MOSFETs and can accelerate
its adoption.

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