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MSL level 4 and TCT 1000 cycle TCT
electrical test. Therefore, the 2.2D
structure shows good potential for a
heterogeneous integration substrate for
both mid-end and high-end applications.
Furthermore, we also disclosed that
the 2.2D integrated substrate solution
can be used in a 5/6G AiP structure,
as a substitute in a current advanced
ABF substrate, and in localized high-
density bridges.

Acknowledgment
This article is based on materials
originally presented at the 2021 IEEE 71st
Electronic Components and Technology
Conference (ECTC), June 2021.

References
1. D. C. Hu, E. Hao Chen, J. ChangBing
Lee, C. P. Sun, C. C. Hsu, “2.2D die-
last integrated substrate for high-
performance applications,” ECTC
2021.
2. M. Swami nathan, K. J. Han,
Design and Modeling for 3D ICs
and Interposers, World Scientific
Publishing Co. Pte. Ltd. 2014.
3. D. C. Hu, “An innovative system
i nt eg r a t io n i nt er c o n n ec t io n
technology beyond BEOL,” IEEE
Inter. Interconnection Conf., Santa
Clara, U.S.A., 2018.
4. D. C. Hu, J. Ho, “Methods to reduce
the hierarchy of interconnections in
electronic system,” Proc. of IMAPS
2020.
5. W. H . Ya ng , R . Y. C h a ng ,
“Numerical simulation of mold
P fill in injection molding using a
RoHS
three-dimensional finite volume
approach,” Inter. Jour. for Numerical
Methods in Fluids, vol. 37, 2001.

Biography
Dyi-Chung Hu is CEO of SiPlus Co., Hsinchu, Taiwan, ROC. He is the founding member of a number of
high-tech companies including SiPlus Co., Raytek Semiconductor Co., Hannstar Display, and E-ink Co. He
was a SVP of R&D at Unimicron Technology Co. and was the founding chairman of the SEMICON Taiwan
Packaging Committee. He earned a PhD from MIT in Material Science and Engineering. Email hu@si2plus.
com

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