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high production throughput to support
                                                                              the GaN AuSn eutectic process. The
                                                                              machines also support the AuSi eutectic
                                                                              process by using different pre-heat
                                                                              and eutectic temperatures and can be
                                                                              configured to add epoxy dispensing and
                                                                              epoxy stamping. Our fully-automated
                                                                              solution for RF power amplifier device
                                                                              manufacturing meets the challenges
                                                                              posed by the accelerated deployment of
                                                                              5G at an attractive return on investment
                                                                              for users.

                                                                              References
                                                                                1.  M. Di Paolo Emilio, “RF power
                                                                                  semiconductors for 5G shift to
                                                                                  WBG materials,” September 4,
                                                                                  2020, Electronic Products.
                                                                                2. Mark LaPedus, “Power Amp Wars
                                                                                  Begin  For  5G,”  Aug.  24,  2020,
                                                                                  Semiconductor Engineering.
                                                                                3. “GaN RF market  applications,
                                                                                  players, technology, and substrates
                                                                                  2020,” Yole Développement report,
                                                                                  May 2020.
                                                                                4. Paul Shepard, “Pressureless sinter
                                                                                  joining for next-gen GaN & SiC
                                                                                  power semis,” Sept. 01, 2017,
                                                                                  EEPower.
                                                                                5. H. Yang, et al., “Improvement of
                                                                                  sintering performance of nanosilver
                                                                                  paste by tin doping, 22 Jan. 2020, J.
                                                                                  of Nanomaterials.
                                                                                6. XiaominWang, et al., “Pressureless
                                                                                  sintering of nanosilver paste as
                                                                                  die attachment on substrates with
        Figure 4: Voiding results by scanning acoustic microscope results for the five samples.  ENIG finish for semiconductor
        images show that all of the 15 samples of   Summary                       applications,” Volume 777, 10 Mar.
        the solder flowed evenly without oxidation.  We have developed a highly flexible   2019, pp.: 578-585, J. of Alloys and
          After the build, five samples were   automation solution to support multi-  Compounds.
        tested for voiding through the use of a   die, multi-process production for RF PA   7.  K. S. Siow, Die-Attach Materials
        scanning acoustic microscope (SAM).   devices for 5G base station applications.   for High Temperature Applications
        The average total void is 1.6% and the   The tests show that the machines   in Microelectronics Packaging,
        average single void is 0.89%. The results   achieve high die bonding accuracy   Materials, Processes, Equipment,
        are shown in Figure 4.             and very low void percentage with      and Reliability, pub. Springer, 2019.



                       Biographies
                         Limin Zhou is a Senior Director of Strategic Marketing at MRSI Systems, Mycronic Group, MA, USA.
                       Prior to joining the company in 2019, he was Senior R&D Director at NeoPhotonics, China, NPI & Product
                       Engineering Director in Oclaro Asia, and NPI Operation Director in both JDSU and SAMN-SCI China. He
                       also worked in Sebit as co-founder of a start-up laser company. His career began at Chartered Semiconductor.
                       He has a PhD in Automation from Xi’an Jiaotong U.; Email limin.zhou@mycronic.com
                         Julius R. Ortega is a Principal Applications Engineer at MRSI Systems, Mycronic Group, MA, USA. He
          joined the company in 2000 and started his career at Texas Instruments (Baguio City, Philippines) as Test Equipment Engineer
          (Manufacturing); he was also a Field Service Support Engineer for Schlumberger (Semiconductor Test and Assembly Division)
          supporting Intel (Philippines, Malaysia & Israel) Asia. He has a BS in Electronics & Communications Engineering from Saint
          Louis U. (Baguio City, Philippines).


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